JPH0466101B2 - - Google Patents

Info

Publication number
JPH0466101B2
JPH0466101B2 JP60005412A JP541285A JPH0466101B2 JP H0466101 B2 JPH0466101 B2 JP H0466101B2 JP 60005412 A JP60005412 A JP 60005412A JP 541285 A JP541285 A JP 541285A JP H0466101 B2 JPH0466101 B2 JP H0466101B2
Authority
JP
Japan
Prior art keywords
electrode
emitter
collector
base
wiring layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60005412A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61164260A (ja
Inventor
Shoichi Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP60005412A priority Critical patent/JPS61164260A/ja
Publication of JPS61164260A publication Critical patent/JPS61164260A/ja
Publication of JPH0466101B2 publication Critical patent/JPH0466101B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP60005412A 1985-01-16 1985-01-16 バイポ―ラトランジスタ Granted JPS61164260A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60005412A JPS61164260A (ja) 1985-01-16 1985-01-16 バイポ―ラトランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60005412A JPS61164260A (ja) 1985-01-16 1985-01-16 バイポ―ラトランジスタ

Publications (2)

Publication Number Publication Date
JPS61164260A JPS61164260A (ja) 1986-07-24
JPH0466101B2 true JPH0466101B2 (en]) 1992-10-22

Family

ID=11610429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60005412A Granted JPS61164260A (ja) 1985-01-16 1985-01-16 バイポ―ラトランジスタ

Country Status (1)

Country Link
JP (1) JPS61164260A (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2352042A1 (en) 2010-01-29 2011-08-03 Sony Corporation Optical element and method for manufacturing the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56134763A (en) * 1980-03-26 1981-10-21 Chiyou Lsi Gijutsu Kenkyu Kumiai Bipolar integrated circuit
JPS5858760A (ja) * 1981-10-05 1983-04-07 Nec Corp 半導体装置
JPS5871655A (ja) * 1981-10-23 1983-04-28 Toshiba Corp 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2352042A1 (en) 2010-01-29 2011-08-03 Sony Corporation Optical element and method for manufacturing the same

Also Published As

Publication number Publication date
JPS61164260A (ja) 1986-07-24

Similar Documents

Publication Publication Date Title
GB2148591A (en) Semiconductor device isolation grooves
US4057894A (en) Controllably valued resistor
US5061645A (en) Method of manufacturing a bipolar transistor
US5336632A (en) Method for manufacturing capacitor and bipolar transistor
JPS6159852A (ja) 半導体装置の製造方法
EP0030147A1 (en) Method for manufacturing a semiconductor integrated circuit
JPH07114210B2 (ja) 半導体装置の製造方法
KR910006699B1 (ko) 반도체 장치
US5246877A (en) Method of manufacturing a semiconductor device having a polycrystalline electrode region
JP3923620B2 (ja) 半導体基板の製造方法
JPH0466101B2 (en])
US5188972A (en) Method for making bipolar transistor by self-aligning the emitter to the base contact diffusion
US4675983A (en) Method of making a semiconductor including forming graft/extrinsic and intrinsic base regions
JPS61172346A (ja) 半導体集積回路装置
JP2663632B2 (ja) 半導体装置及びその製造方法
JPH0128507B2 (en])
JP2757872B2 (ja) 半導体装置及びその製造方法
JPS6117154B2 (en])
JP2764988B2 (ja) 半導体装置
JPS6252966A (ja) 半導体装置の製造方法
JPS58107645A (ja) 半導体装置の製法
WO1992014262A1 (en) Semiconductor structure and method for making same
JPS644351B2 (en])
JPS62235766A (ja) 半導体装置の製造方法
JPS63114261A (ja) トランジスタ用の自己整合型ベース分路